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NTD5406N Power MOSFET
40 V, 70 A, Single N-Channel, DPAK
Features
* * * *
Low RDS(on) High Current Capability Low Gate Charge These are Pb-Free Devices
V(BR)DSS 40 V
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Applications
RDS(ON) TYP 8.7 m @ 10 V
ID MAX (Note 1) 70 A
* Electronic Brake Systems * Electronic Power Steering * Bridge Circuits
MAXIMUM RATINGS (TJ = 25C unless otherwise stated)
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current - RqJC (Note 1) Power Dissipation - RqJC (Note 1) Pulsed Drain Current Steady State Steady State TC = 25C TC = 100C TC = 25C PD IDM TJ, TSTG IS EAS Symbol VDSS VGS ID Value 40 20 70 50 100 75 -55 to 175 63.5 450 W Units V V A
N-Channel D
G S
4 A
tp = 10 ms
MARKING DIAGRAM
1 YWW 54 06NG
Operating Junction and Storage Temperature Source Current (Body Diode) Pulsed Single Pulse Drain-to Source Avalanche Energy - (VDD = 50 V, VGS = 10 V, IPK = 30 A, L = 1 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8" from case for 10 s)
C
A mJ
12 3 DPAK CASE 369C STYLE 2 Y WW 5406N G
TL
260
C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
= Year = Work Week = Specific Device Code = Pb-Free Device
ORDERING INFORMATION
Device Package DPAK (Pb-Free) DPAK (Pb-Free) Shipping 75 Units / Rail 2500 / Tape & Reel NTD5406NG NTD5406NT4G
THERMAL RESISTANCE RATINGS (Note 1)
Parameter Junction-to-Case (Drain) Symbol RJC Max 1.5 Units C/W
1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
(c) Semiconductor Components Industries, LLC, 2005
1
October, 2005 - Rev. 0
Publication Order Number: NTD5406N/D
NTD5406N
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise stated)
Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS VGS = 0 V, VDS = 40 V TJ = 25C TJ = 100C VGS = 0 V, ID = 250 mA 40 42 1.0 10 100 nA V mV/C mA Symbol Test Condition Min Typ Max Unit
Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Gate Threshold Temperature Coefficient Drain-to-Source On Resistance
IGSS
VDS = 0 V, VGS = 30 V
VGS(TH) VGS(TH)/TJ RDS(on)
VGS = VDS, ID = 250 mA
1.5 -7.0
3.5
V mV/C
VGS = 10 V, ID = 30 A VGS = 5.0 V, ID = 10 A
8.7 13.2 19
10 17
mW
Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge
gFS
VGS = 10 V, ID = 10 A
S
CISS COSS CRSS QG(TOT) QG(TH) QGS QGD VGS = 10 V, VDS = 32 V, ID = 30 A VGS = 0 V, f = 1.0 MHz, VDS = 32 V
1375 370 160 45 2.0 5.4 20
2500 700 300
pF
nC
SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) tr td(OFF) tf VGS = 10 V, VDD = 32 V, ID = 30 A, RG = 2.5 W 7.2 57 30 67 ns
SWITCHING CHARACTERISTICS, VGS = 5 V (Note 3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) tr td(OFF) tf VGS = 5.0 V, VDD = 20 V, ID = 30 A, RG = 2.5 W 15 147 20 29 ns
DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 10 A TJ = 25C TJ = 125C 0.82 0.67 46 VGS = 0 V, dISD/dt = 100 A/ms, IS = 10 A 24 22 65 nC ns 1.1 V
Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge
tRR ta tb QRR
2. Pulse Test: pulse width 300 ms, duty cycle 2%. 3. Switching characteristics are independent of operating junction temperatures.
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NTD5406N
TYPICAL PERFORMANCE CURVES
80 ID, DRAIN CURRENT (AMPS) 70 60 50 40 30 4.2 V 20 10 0 0 1 2 3 4 5 6 7 8 4V 3.8 V 3.6 V 9 10 VGS = 7 V to 10 V TJ = 25C 80 6V 5V 4.8 V 4.6 V 4.4 V ID, DRAIN CURRENT (AMPS) 70 60 50 40 30 20 10 0 0 TJ = 100C TJ = 25C TJ = -55C 4 3 5 6 7 1 2 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 8 VDS 10 V
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On-Region Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.03 ID = 30 A TJ = 25C 0.020 0.018 0.016 0.014 0.012 0.010 0.008 0.006 0.004 10
Figure 2. Transfer Characteristics
TJ = 25C
0.025
VGS = 5 V
0.02
0.015
VGS = 10 V
0.01
0.005 3 4 5 6 7 8 9 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
20
30
40
50
60
ID, DRAIN CURRENT (AMPS)
Figure 3. On-Resistance vs. Gate-to-Source Voltage
2 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.8 1.6 1.4 1.2 1 0.8 0.6 -50 ID = 10 A VGS = 10 V IDSS, LEAKAGE (nA) 1000 10000
Figure 4. On-Resistance vs. Drain Current and Gate Voltage
VGS = 0 V
TJ = 175C 100
10
TJ = 100C
-25
0
25
50
75
100
125
150
175
1 2
4
6
8
10
12
14
16
18
20
TJ, JUNCTION TEMPERATURE (C)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. On-Resistance Variation with Temperature
Figure 6. Drain-to-Source Leakage Current vs. Voltage
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NTD5406N
TYPICAL PERFORMANCE CURVES
3600 3000 C, CAPACITANCE (pF) 2400 Crss 1800 Ciss 1200 600 0 10 Crss 0 5 5 VGS VDS 10 15 20 25 30 35 Coss VDS = 0 V VGS = 0 V Ciss TJ = 25C VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 12 QT 9 VDS VGS 36 V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS)
27
6
QGS
QGD
18
3 ID = 30 A TJ = 25C 0 0 10 30 20 40 QG, TOTAL GATE CHARGE (nC)
9
40
0 50
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
1000 IS, SOURCE CURRENT (AMPS) VDS = 32 V ID = 30 A VGS = 10 V t, TIME (ns) 100 tf tr td(off) 10 td(on) 30 25 20 15 10 5 0 0.4
Figure 8. Gate-To-Source and Drain-To-Source Voltage vs. Total Charge
VGS = 0 V TJ = 25C
1
1
10 RG, GATE RESISTANCE (OHMS)
100
0.5 0.7 0.6 0.8 0.9 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
1
Figure 9. Resistive Switching Time Variation vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
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4
NTD5406N
PACKAGE DIMENSIONS
DPAK CASE 369C-01 ISSUE O
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 --- 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 --- 0.89 1.27 3.93 ---
-T- B V R
4
SEATING PLANE
C E
DIM A B C D E F G H J K L R S U V Z
A S
1 2 3
Z U
K F L D G
2 PL
J H 0.13 (0.005)
M
T
STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN
SOLDERING FOOTPRINT*
6.20 0.244 3.0 0.118
2.58 0.101
5.80 0.228
1.6 0.063
6.172 0.243
SCALE 3:1
mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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NTD5406N/D

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